IndiumV3, Main, Repository, bibRecord, 011230

Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates : Special issue papers

Identifieur interne : 011230 ( Main/Repository ); précédent : 011229; suivant : 011231

Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates : Special issue papers

Auteurs : RBID : Pascal:01-0322636

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase vapeur, Méthode MOCVD, Point quantique, Autoassemblage, Indium phosphure, Matériau semiconducteur, Semiconducteur III-V, Aluminium phosphure, Caractérisation, Structure îlot, Microscopie force atomique, Photoluminescence, TEM, Substrat GaAs, 8107T, 8116D, 6865H, 8115G, InP, In P, InAlP, Al In P.

English descriptors

KwdEn :
- Aluminium phosphides, Atomic force microscopy, Characterization, Crystal growth from vapors, Experimental study, III-V semiconductors, Indium phosphides, Island structure, MOCVD, Photoluminescence, Quantum dots, Self assembly, Semiconductor materials, TEM.

Abstract

We report the characteristics of InP self-assembled quantum dots embedded in In_0.5Al_0.5P on GaAs substrates grown by metalorganic chemical vapor deposition. The InP quantum dots show increased average dot sizes and decreased dot densities, as the growth temperature increases from 475°C to 600°C with constant growth time. Above the growth temperature of 600°C, however, dramatically smaller and densely distributed self-assembled InP quantum dots are formed. The small InP quantum dots grown at 650°C are dislocation-free "coherent" regions with an average size of ∼20 nm (height) and a density of ∼1.5 x 10⁸ mm^-2. These InP quantum dots have a broad range of luminescence corresponding to red or orange in the visible spectrum.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 010D38

Links to Exploration step

Pascal:01-0322636

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates : Special issue papers</title>
<author><name sortKey="Ryou, Jae Hyun" uniqKey="Ryou J">Jae-Hyun Ryou</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>University of Texas at Austin, Microelectronics Research Center</s1>
<s2>Austin, TX 78758</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Austin, TX 78758</wicri:noRegion>
<orgName type="university">Université du Texas à Austin</orgName>
<placeName><settlement type="city">Austin (Texas)</settlement>
<region type="state">Texas</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Dupuis, Russell D" uniqKey="Dupuis R">Russell D. Dupuis</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>University of Texas at Austin, Microelectronics Research Center</s1>
<s2>Austin, TX 78758</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Austin, TX 78758</wicri:noRegion>
<orgName type="university">Université du Texas à Austin</orgName>
<placeName><settlement type="city">Austin (Texas)</settlement>
<region type="state">Texas</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Reddy, C V" uniqKey="Reddy C">C. V. Reddy</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Harvard University, Gordon McKay Laboratory of Applied Sciences</s1>
<s2>Cambridge, MA 02138</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Cambridge, MA 02138</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Narayanamurti, Venkatesh" uniqKey="Narayanamurti V">Venkatesh Narayanamurti</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Harvard University, Gordon McKay Laboratory of Applied Sciences</s1>
<s2>Cambridge, MA 02138</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Cambridge, MA 02138</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mathes, David T" uniqKey="Mathes D">David T. Mathes</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>University of Virginia, Department of Materials Science and Engineering</s1>
<s2>Charlottesville, VA 22906</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Charlottesville, VA 22906</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Hull, Robert" uniqKey="Hull R">Robert Hull</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Harvard University, Gordon McKay Laboratory of Applied Sciences</s1>
<s2>Cambridge, MA 02138</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Cambridge, MA 02138</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mintairov, Alexander" uniqKey="Mintairov A">Alexander Mintairov</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>University of Notre Dame, Department of Electrical Engineering, Notre Dame</s1>
<s2>IN 46556</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Indiana</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Merz, James L" uniqKey="Merz J">James L. Merz</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>University of Notre Dame, Department of Electrical Engineering, Notre Dame</s1>
<s2>IN 46556</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Indiana</region>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">01-0322636</idno>
<date when="2001">2001</date>
<idno type="stanalyst">PASCAL 01-0322636 INIST</idno>
<idno type="RBID">Pascal:01-0322636</idno>
<idno type="wicri:Area/Main/Corpus">010D38</idno>
<idno type="wicri:Area/Main/Repository">011230</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0361-5235</idno>
<title level="j" type="abbreviated">J. electron. mater.</title>
<title level="j" type="main">Journal of electronic materials</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium phosphides</term>
<term>Atomic force microscopy</term>
<term>Characterization</term>
<term>Crystal growth from vapors</term>
<term>Experimental study</term>
<term>III-V semiconductors</term>
<term>Indium phosphides</term>
<term>Island structure</term>
<term>MOCVD</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Self assembly</term>
<term>Semiconductor materials</term>
<term>TEM</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Méthode MOCVD</term>
<term>Point quantique</term>
<term>Autoassemblage</term>
<term>Indium phosphure</term>
<term>Matériau semiconducteur</term>
<term>Semiconducteur III-V</term>
<term>Aluminium phosphure</term>
<term>Caractérisation</term>
<term>Structure îlot</term>
<term>Microscopie force atomique</term>
<term>Photoluminescence</term>
<term>TEM</term>
<term>Substrat GaAs</term>
<term>8107T</term>
<term>8116D</term>
<term>6865H</term>
<term>8115G</term>
<term>InP</term>
<term>In P</term>
<term>InAlP</term>
<term>Al In P</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">We report the characteristics of InP self-assembled quantum dots embedded in In<sub>0.5</sub>
Al<sub>0.5</sub>
P on GaAs substrates grown by metalorganic chemical vapor deposition. The InP quantum dots show increased average dot sizes and decreased dot densities, as the growth temperature increases from 475°C to 600°C with constant growth time. Above the growth temperature of 600°C, however, dramatically smaller and densely distributed self-assembled InP quantum dots are formed. The small InP quantum dots grown at 650°C are dislocation-free "coherent" regions with an average size of ∼20 nm (height) and a density of ∼1.5 x 10<sup>8</sup>
 mm<sup>-2</sup>
. These InP quantum dots have a broad range of luminescence corresponding to red or orange in the visible spectrum.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0>
</fA01>
<fA02 i1="01"><s0>JECMA5</s0>
</fA02>
<fA03 i2="1"><s0>J. electron. mater.</s0>
</fA03>
<fA05><s2>30</s2>
</fA05>
<fA06><s2>5</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates : Special issue papers</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>RYOU (Jae-Hyun)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>DUPUIS (Russell D.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>REDDY (C. V.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>NARAYANAMURTI (Venkatesh)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>MATHES (David T.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>HULL (Robert)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>MINTAIROV (Alexander)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>MERZ (James L.)</s1>
</fA11>
<fA14 i1="01"><s1>University of Texas at Austin, Microelectronics Research Center</s1>
<s2>Austin, TX 78758</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Harvard University, Gordon McKay Laboratory of Applied Sciences</s1>
<s2>Cambridge, MA 02138</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>University of Virginia, Department of Materials Science and Engineering</s1>
<s2>Charlottesville, VA 22906</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>University of Notre Dame, Department of Electrical Engineering, Notre Dame</s1>
<s2>IN 46556</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA20><s1>471-476</s1>
</fA20>
<fA21><s1>2001</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>15479</s2>
<s5>354000098264060050</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2001 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>16 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>01-0322636</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>We report the characteristics of InP self-assembled quantum dots embedded in In<sub>0.5</sub>
Al<sub>0.5</sub>
P on GaAs substrates grown by metalorganic chemical vapor deposition. The InP quantum dots show increased average dot sizes and decreased dot densities, as the growth temperature increases from 475°C to 600°C with constant growth time. Above the growth temperature of 600°C, however, dramatically smaller and densely distributed self-assembled InP quantum dots are formed. The small InP quantum dots grown at 650°C are dislocation-free "coherent" regions with an average size of ∼20 nm (height) and a density of ∼1.5 x 10<sup>8</sup>
 mm<sup>-2</sup>
. These InP quantum dots have a broad range of luminescence corresponding to red or orange in the visible spectrum.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A05Y</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60H65</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A15G</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Crystal growth from vapors</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Méthode MOCVD</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>MOCVD</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Autoassemblage</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Self assembly</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Autoensamble</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Matériau semiconducteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Aluminium phosphure</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Aluminium phosphides</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Caractérisation</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Characterization</s0>
<s5>12</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Caracterización</s0>
<s5>12</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Structure îlot</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Island structure</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Microscopie force atomique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Atomic force microscopy</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>TEM</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>TEM</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Substrat GaAs</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>8107T</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>8116D</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>6865H</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8115G</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>59</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>InAlP</s0>
<s4>INC</s4>
<s5>94</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Al In P</s0>
<s4>INC</s4>
<s5>95</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Phosphure</s0>
<s2>NA</s2>
<s5>07</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Phosphides</s0>
<s2>NA</s2>
<s5>07</s5>
</fC07>
<fC07 i1="02" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>08</s5>
</fC07>
<fC07 i1="02" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>08</s5>
</fC07>
<fN21><s1>225</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 011230 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 011230 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:01-0322636
   |texte=   Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates : Special issue papers
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates : Special issue papers

Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates : Special issue papers

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri